Low temperature a/b nanotwins in Ni(50)Mn(25+x)Ga(25−x) Heusler alloys

We have found low temperature a/b nanotwins having (110) twinning plane in a five-layered modulated martensite phase of Ni(50)Mn(25+x)Ga(25−x) (at. %) Heusler alloys and identified the particular region in phase diagram where the nanotwinning occurs. Evolution of the structure with decreasing temperature was studied by X-ray diffraction using single crystals exhibiting magnetic shape memory effect. The merging of (400) and (040) lines upon cooling for 2.6 < x < 3.5 indicated a/b nanotwinning originating from the refinement of initially coarse a/b twins. Refinement of the twins with decreasing temperature was observed directly using scanning electron microscopy. The prerequisite for nanotwinning is an extremely low twin boundary energy, which we estimated using first-principles calculations to be 0.16 meV/Å(2). As the nanotwinning distorts the relation between the crystal lattice and the X-ray diffraction pattern, it should be taken into consideration in structural studies of Ni-Mn-Ga Heusler alloys.