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Electron-Beam Manipulation of Silicon Dopants in Graphene

[Image: see text] The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for sing...

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Autores principales: Tripathi, Mukesh, Mittelberger, Andreas, Pike, Nicholas A., Mangler, Clemens, Meyer, Jannik C., Verstraete, Matthieu J., Kotakoski, Jani, Susi, Toma
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6089495/
https://www.ncbi.nlm.nih.gov/pubmed/29945442
http://dx.doi.org/10.1021/acs.nanolett.8b02406
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author Tripathi, Mukesh
Mittelberger, Andreas
Pike, Nicholas A.
Mangler, Clemens
Meyer, Jannik C.
Verstraete, Matthieu J.
Kotakoski, Jani
Susi, Toma
author_facet Tripathi, Mukesh
Mittelberger, Andreas
Pike, Nicholas A.
Mangler, Clemens
Meyer, Jannik C.
Verstraete, Matthieu J.
Kotakoski, Jani
Susi, Toma
author_sort Tripathi, Mukesh
collection PubMed
description [Image: see text] The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for single-atom manipulation of covalently bound materials. Pioneering experiments using an atomically focused electron beam have demonstrated the directed movement of silicon atoms over a handful of sites within the graphene lattice. Here, we achieve a much greater degree of control, allowing us to precisely move silicon impurities along an extended path, circulating a single hexagon, or back and forth between the two graphene sublattices. Even with manual operation, our manipulation rate is already comparable to the state-of-the-art in any atomically precise technique. We further explore the influence of electron energy on the manipulation rate, supported by improved theoretical modeling taking into account the vibrations of atoms near the impurities, and implement feedback to detect manipulation events in real time. In addition to atomic-level engineering of its structure and properties, graphene also provides an excellent platform for refining the accuracy of quantitative models and for the development of automated manipulation.
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spelling pubmed-60894952018-08-14 Electron-Beam Manipulation of Silicon Dopants in Graphene Tripathi, Mukesh Mittelberger, Andreas Pike, Nicholas A. Mangler, Clemens Meyer, Jannik C. Verstraete, Matthieu J. Kotakoski, Jani Susi, Toma Nano Lett [Image: see text] The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for single-atom manipulation of covalently bound materials. Pioneering experiments using an atomically focused electron beam have demonstrated the directed movement of silicon atoms over a handful of sites within the graphene lattice. Here, we achieve a much greater degree of control, allowing us to precisely move silicon impurities along an extended path, circulating a single hexagon, or back and forth between the two graphene sublattices. Even with manual operation, our manipulation rate is already comparable to the state-of-the-art in any atomically precise technique. We further explore the influence of electron energy on the manipulation rate, supported by improved theoretical modeling taking into account the vibrations of atoms near the impurities, and implement feedback to detect manipulation events in real time. In addition to atomic-level engineering of its structure and properties, graphene also provides an excellent platform for refining the accuracy of quantitative models and for the development of automated manipulation. American Chemical Society 2018-06-27 2018-08-08 /pmc/articles/PMC6089495/ /pubmed/29945442 http://dx.doi.org/10.1021/acs.nanolett.8b02406 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Tripathi, Mukesh
Mittelberger, Andreas
Pike, Nicholas A.
Mangler, Clemens
Meyer, Jannik C.
Verstraete, Matthieu J.
Kotakoski, Jani
Susi, Toma
Electron-Beam Manipulation of Silicon Dopants in Graphene
title Electron-Beam Manipulation of Silicon Dopants in Graphene
title_full Electron-Beam Manipulation of Silicon Dopants in Graphene
title_fullStr Electron-Beam Manipulation of Silicon Dopants in Graphene
title_full_unstemmed Electron-Beam Manipulation of Silicon Dopants in Graphene
title_short Electron-Beam Manipulation of Silicon Dopants in Graphene
title_sort electron-beam manipulation of silicon dopants in graphene
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6089495/
https://www.ncbi.nlm.nih.gov/pubmed/29945442
http://dx.doi.org/10.1021/acs.nanolett.8b02406
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