Cargando…

Electron-Beam Manipulation of Silicon Dopants in Graphene

[Image: see text] The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for sing...

Descripción completa

Detalles Bibliográficos
Autores principales:	Tripathi, Mukesh, Mittelberger, Andreas, Pike, Nicholas A., Mangler, Clemens, Meyer, Jannik C., Verstraete, Matthieu J., Kotakoski, Jani, Susi, Toma
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2018
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6089495/ https://www.ncbi.nlm.nih.gov/pubmed/29945442 http://dx.doi.org/10.1021/acs.nanolett.8b02406

Ejemplares similares

Direct imaging of light-element impurities in graphene reveals triple-coordinated oxygen
por: Hofer, Christoph, et al.
Publicado: (2019)

Atomic-Level Structural Engineering of Graphene on a Mesoscopic Scale
por: Trentino, Alberto, et al.
Publicado: (2021)

Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide
por: Susi, Toma, et al.
Publicado: (2017)

Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies
por: Inani, Heena, et al.
Publicado: (2019)

Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon
por: Markevich, Alexander, et al.
Publicado: (2021)

Imaging atomic-level random walk of a point defect in graphene
por: Kotakoski, Jani, et al.
Publicado: (2014)

Single Indium Atoms and Few-Atom Indium Clusters Anchored onto Graphene via Silicon Heteroatoms
por: Elibol, Kenan, et al.
Publicado: (2021)

Buckyball sandwiches
por: Mirzayev, Rasim, et al.
Publicado: (2017)

Isotope analysis in the transmission electron microscope
por: Susi, Toma, et al.
Publicado: (2016)

Corrigendum: Isotope analysis in the transmission electron microscope
por: Susi, Toma, et al.
Publicado: (2017)

Toward Two-Dimensional All-Carbon Heterostructures via Ion Beam Patterning of Single-Layer Graphene
por: Kotakoski, Jani, et al.
Publicado: (2015)

Unraveling the 3D Atomic Structure of a Suspended Graphene/hBN van der Waals Heterostructure
por: Argentero, Giacomo, et al.
Publicado: (2017)

Probing from Both Sides: Reshaping the Graphene Landscape via Face-to-Face Dual-Probe Microscopy
por: Eder, Franz R., et al.
Publicado: (2013)

Influence of temperature on the displacement threshold energy in graphene
por: Chirita Mihaila, Alexandru Ionut, et al.
Publicado: (2019)

Atomic-Scale Deformations at the Interface of a Mixed-Dimensional van der Waals Heterostructure
por: Mustonen, Kimmo, et al.
Publicado: (2018)

Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films
por: Bayer, Bernhard C., et al.
Publicado: (2017)

Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTe(2)
por: Elibol, Kenan, et al.
Publicado: (2018)

A journey from order to disorder — Atom by atom transformation from graphene to a 2D carbon glass
por: Eder, Franz R., et al.
Publicado: (2014)

Engineering single-atom dynamics with electron irradiation
por: Su, Cong, et al.
Publicado: (2019)

Scaling Properties of Charge Transport in Polycrystalline Graphene
por: Van Tuan, Dinh, et al.
Publicado: (2013)

Insights into radiation damage from atomic resolution scanning transmission electron microscopy imaging of mono-layer CuPcCl(16) films on graphene
por: Mittelberger, Andreas, et al.
Publicado: (2018)

Transformation and Evaporation of Surface Adsorbents on a Graphene “Hot Plate”
por: Choi, Jun Hee, et al.
Publicado: (2020)

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS(2) Films
por: Bayer, Bernhard C., et al.
Publicado: (2018)

Identifying and manipulating single atoms with scanning transmission electron microscopy
por: Susi, Toma
Publicado: (2022)

Atomic structure from large-area, low-dose exposures of materials: A new route to circumvent radiation damage()
por: Meyer, J.C., et al.
Publicado: (2014)

Corrugations in Free-Standing Graphene
por: Singh, Rajendra, et al.
Publicado: (2022)

Dopant morphology as the factor limiting graphene conductivity
por: Hofmann, Mario, et al.
Publicado: (2015)

Atom devices based on single dopants in silicon nanostructures
por: Moraru, Daniel, et al.
Publicado: (2011)

Quantum simulation of the Hubbard model with dopant atoms in silicon
por: Salfi, J., et al.
Publicado: (2016)

Time-resolved single dopant charge dynamics in silicon
por: Rashidi, Mohammad, et al.
Publicado: (2016)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors
por: Nouais, D, et al.
Publicado: (2000)

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
por: Moraru, Daniel, et al.
Publicado: (2015)

Visualising the strain distribution in suspended two-dimensional materials under local deformation
por: Elibol, Kenan, et al.
Publicado: (2016)

Dopant-specific unzipping of carbon nanotubes for intact crystalline graphene nanostructures
por: Lim, Joonwon, et al.
Publicado: (2016)

Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform
por: Røst, Håkon I., et al.
Publicado: (2023)

Chemical Dopants on Edge of Holey Graphene Accelerate Electrochemical Hydrogen Evolution Reaction
por: Kumatani, Akichika, et al.
Publicado: (2019)

Dopant‐Free and Carrier‐Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives
por: Gao, Pingqi, et al.
Publicado: (2017)

Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants
por: He, Hans, et al.
Publicado: (2018)

Change of Electronic Structures by Dopant-Induced Local Strain
por: Hyeong Kim, Gyu, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_bmbgcchpsj227rjl3ji05kpkdo