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Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers
[Image: see text] Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2018
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6095635/ https://www.ncbi.nlm.nih.gov/pubmed/29913062 http://dx.doi.org/10.1021/acs.nanolett.8b01223 |
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author | Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. |
author_facet | Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. |
author_sort | Summerfield, Alex |
collection | PubMed |
description | [Image: see text] Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes. |
format | Online Article Text |
id | pubmed-6095635 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-60956352018-08-17 Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. Nano Lett [Image: see text] Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes. American Chemical Society 2018-06-18 2018-07-11 /pmc/articles/PMC6095635/ /pubmed/29913062 http://dx.doi.org/10.1021/acs.nanolett.8b01223 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. |
spellingShingle | Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers |
title | Moiré-Modulated Conductance of Hexagonal Boron
Nitride Tunnel Barriers |
title_full | Moiré-Modulated Conductance of Hexagonal Boron
Nitride Tunnel Barriers |
title_fullStr | Moiré-Modulated Conductance of Hexagonal Boron
Nitride Tunnel Barriers |
title_full_unstemmed | Moiré-Modulated Conductance of Hexagonal Boron
Nitride Tunnel Barriers |
title_short | Moiré-Modulated Conductance of Hexagonal Boron
Nitride Tunnel Barriers |
title_sort | moiré-modulated conductance of hexagonal boron
nitride tunnel barriers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6095635/ https://www.ncbi.nlm.nih.gov/pubmed/29913062 http://dx.doi.org/10.1021/acs.nanolett.8b01223 |
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