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Flexible memristive devices based on polyimide:mica nanosheet nanocomposites with an embedded PEDOT:PSS layer

Flexible memristive devices with a structure of Al/polyimide:mica/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/indium-tin-oxide/polyethylene glycol naphthalate showed electrical bistability characteristics. The maximum current margin of the devices with mica nanosheets was much larger than...

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Detalles Bibliográficos
Autores principales: Choi, Myoung Kyun, Kim, Woo Kyum, Sung, Sihyun, Wu, Chaoxing, Kim, Hyoun Woo, Kim, Tae Whan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6095845/
https://www.ncbi.nlm.nih.gov/pubmed/30115988
http://dx.doi.org/10.1038/s41598-018-30771-5
Descripción
Sumario:Flexible memristive devices with a structure of Al/polyimide:mica/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/indium-tin-oxide/polyethylene glycol naphthalate showed electrical bistability characteristics. The maximum current margin of the devices with mica nanosheets was much larger than that of the devices without mica nanosheets. For these devices, the current vs. time curves showed nonvolatile characteristics with a retention time of more than 1 × 10(4) s, and the current vs. number-of-cycles curves demonstrated an endurance for high resistance state/low resistance state switchings of 1 × 10(2) cycles. As to the operation performance, the “reset” voltage was distributed between 2.5 and 3 V, and the “set” voltage was distributed between −0.7 and −0.5 V, indicative of high uniformity. The electrical characteristics of the devices after full bendings with various radii of curvature were similar to those before bending, which was indicative of devices having ultra-flexibility. The carrier transport and the operation mechanisms of the devices were explained based on the current vs. voltage curves and the energy band diagrams.