Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN la...

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Detalles Bibliográficos
Autores principales: Lin, Tao, Zhou, Zhi Yan, Huang, Yao Min, Yang, Kun, Zhang, Bai Jun, Feng, Zhe Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6104412/
https://www.ncbi.nlm.nih.gov/pubmed/30136130
http://dx.doi.org/10.1186/s11671-018-2663-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6104412/
https://www.ncbi.nlm.nih.gov/pubmed/30136130
http://dx.doi.org/10.1186/s11671-018-2663-6

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