Phase Modulators Based on High Mobility Ambipolar ReSe(2) Field-Effect Transistors

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe(2), mechanically exfoliated onto a SiO(2) layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10(2) cm(2)/Vs at ro...

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Detalles Bibliográficos
Autores principales: Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6109127/
https://www.ncbi.nlm.nih.gov/pubmed/30143693
http://dx.doi.org/10.1038/s41598-018-30969-7

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