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Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (R(L...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaofeng, Jin, Chenchen, Deng, Qi, Lv, Meiwei, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6111302/
https://www.ncbi.nlm.nih.gov/pubmed/30081537
http://dx.doi.org/10.3390/s18082551
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author Zhao, Xiaofeng
Jin, Chenchen
Deng, Qi
Lv, Meiwei
Wen, Dianzhong
author_facet Zhao, Xiaofeng
Jin, Chenchen
Deng, Qi
Lv, Meiwei
Wen, Dianzhong
author_sort Zhao, Xiaofeng
collection PubMed
description A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (R(L)(1), R(L)(2), R(L)(3) and R(L)(4)). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (B(x) and B(y)) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the V(CE) = 5.0 V and I(B) = 8.0 mA, the magnetic sensitivities (S(xx) and S(yy)) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that S(xx) and S(yy) exhibit good uniformity.
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spelling pubmed-61113022018-08-30 Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors Zhao, Xiaofeng Jin, Chenchen Deng, Qi Lv, Meiwei Wen, Dianzhong Sensors (Basel) Article A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (R(L)(1), R(L)(2), R(L)(3) and R(L)(4)). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (B(x) and B(y)) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the V(CE) = 5.0 V and I(B) = 8.0 mA, the magnetic sensitivities (S(xx) and S(yy)) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that S(xx) and S(yy) exhibit good uniformity. MDPI 2018-08-04 /pmc/articles/PMC6111302/ /pubmed/30081537 http://dx.doi.org/10.3390/s18082551 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhao, Xiaofeng
Jin, Chenchen
Deng, Qi
Lv, Meiwei
Wen, Dianzhong
Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title_full Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title_fullStr Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title_full_unstemmed Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title_short Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
title_sort fabrication technology and characteristics research of a monolithically-integrated 2d magnetic field sensor based on silicon magnetic sensitive transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6111302/
https://www.ncbi.nlm.nih.gov/pubmed/30081537
http://dx.doi.org/10.3390/s18082551
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