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Assessing Radiation Hardness of Silicon Photonic Sensors

In recent years, silicon photonic platforms have undergone rapid maturation enabling not only optical communication but complex scientific experiments ranging from sensors applications to fundamental physics investigations. There is considerable interest in deploying photonics-based communication an...

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Detalles Bibliográficos
Autores principales: Ahmed, Zeeshan, Cumberland, Lonnie T., Klimov, Nikolai N., Pazos, Ileana M., Tosh, Ronald E., Fitzgerald, Ryan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6115432/
https://www.ncbi.nlm.nih.gov/pubmed/30158669
http://dx.doi.org/10.1038/s41598-018-31286-9
Descripción
Sumario:In recent years, silicon photonic platforms have undergone rapid maturation enabling not only optical communication but complex scientific experiments ranging from sensors applications to fundamental physics investigations. There is considerable interest in deploying photonics-based communication and science instruments in harsh environments such as outer space, where radiation damage is a significant concern. In this study, we have examined the impact of cobalt-60 γ-ray radiation up to 1 megagray (MGy) absorbed dose on silicon photonic devices. We do not find any systematic impact of radiation on passivated devices, indicating the durability of passivated silicon devices under harsh conditions.