Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demons...

Descripción completa

Detalles Bibliográficos
Autores principales: Gutiérrez, Marina, Lloret, Fernando, Pham, Toan T., Cañas, Jesús, Reyes, Daniel F., Eon, David, Pernot, Julien, Araújo, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6116263/
https://www.ncbi.nlm.nih.gov/pubmed/30065199
http://dx.doi.org/10.3390/nano8080584

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6116263/
https://www.ncbi.nlm.nih.gov/pubmed/30065199
http://dx.doi.org/10.3390/nano8080584

Ejemplares similares