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Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs
In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demons...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6116263/ https://www.ncbi.nlm.nih.gov/pubmed/30065199 http://dx.doi.org/10.3390/nano8080584 |