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Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition
The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Springer US
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6119172/ https://www.ncbi.nlm.nih.gov/pubmed/30171366 http://dx.doi.org/10.1186/s11671-018-2685-0 |
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author | Shang, Lei Song, Longfei Wang, Yiqian Cai, Rongsheng Liu, Lei Wang, Fengyun |
author_facet | Shang, Lei Song, Longfei Wang, Yiqian Cai, Rongsheng Liu, Lei Wang, Fengyun |
author_sort | Shang, Lei |
collection | PubMed |
description | The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed structural characterization and statistical analysis reveal that two specific morphologies are dominant in InGaAs NWs, a zigzag surface morphology and a smooth surface morphology. The zigzag morphology results from the periodic existence of twining structures, and the smooth morphology results from a lack of twining structures. HRTEM images and energy-dispersive X-ray spectroscopy (EDX) indicate that the catalyst heads have two structures, Au(4)In and AuIn(2), which produce InGaAs NWs in a cubic phase crystalline form. The growth mechanism of the InGaAs NWs begins with Au nanoparticles melting into small spheres. In atoms are diffused into the Au spheres to form an Au-In alloy. When the concentration of In inside the alloy reaches its saturation point, the In precipitate reacts with Ga and As atoms to form InGaAs at the interface between the catalyst and substrate. Once the InGaAs compound forms, additional precipitation and reactions only occur at the interface of the InGaAs and the catalyst. These results provide a fundamental understanding of the InGaAs NW growth process which is critical to the formation of high-quality InGaAs NWs for various device applications. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-018-2685-0) contains supplementary material, which is available to authorized users. |
format | Online Article Text |
id | pubmed-6119172 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-61191722018-09-10 Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition Shang, Lei Song, Longfei Wang, Yiqian Cai, Rongsheng Liu, Lei Wang, Fengyun Nanoscale Res Lett Nano Express The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed structural characterization and statistical analysis reveal that two specific morphologies are dominant in InGaAs NWs, a zigzag surface morphology and a smooth surface morphology. The zigzag morphology results from the periodic existence of twining structures, and the smooth morphology results from a lack of twining structures. HRTEM images and energy-dispersive X-ray spectroscopy (EDX) indicate that the catalyst heads have two structures, Au(4)In and AuIn(2), which produce InGaAs NWs in a cubic phase crystalline form. The growth mechanism of the InGaAs NWs begins with Au nanoparticles melting into small spheres. In atoms are diffused into the Au spheres to form an Au-In alloy. When the concentration of In inside the alloy reaches its saturation point, the In precipitate reacts with Ga and As atoms to form InGaAs at the interface between the catalyst and substrate. Once the InGaAs compound forms, additional precipitation and reactions only occur at the interface of the InGaAs and the catalyst. These results provide a fundamental understanding of the InGaAs NW growth process which is critical to the formation of high-quality InGaAs NWs for various device applications. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-018-2685-0) contains supplementary material, which is available to authorized users. Springer US 2018-08-31 /pmc/articles/PMC6119172/ /pubmed/30171366 http://dx.doi.org/10.1186/s11671-018-2685-0 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Shang, Lei Song, Longfei Wang, Yiqian Cai, Rongsheng Liu, Lei Wang, Fengyun Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title | Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title_full | Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title_fullStr | Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title_full_unstemmed | Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title_short | Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition |
title_sort | formation mechanisms of ingaas nanowires produced by a solid-source two-step chemical vapor deposition |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6119172/ https://www.ncbi.nlm.nih.gov/pubmed/30171366 http://dx.doi.org/10.1186/s11671-018-2685-0 |
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