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Soft Nondamaging Contacts Formed from Eutectic Ga–In for the Accurate Determination of Dielectric Constants of Organic Materials

[Image: see text] A method for accurately measuring the relative dielectric constant (ε(r)) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated f...

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Detalles Bibliográficos
Autores principales: Douvogianni, Evgenia, Qiu, Xinkai, Qiu, Li, Jahani, Fatemeh, Kooistra, Floris B., Hummelen, Jan C., Chiechi, Ryan C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6122948/
https://www.ncbi.nlm.nih.gov/pubmed/30197469
http://dx.doi.org/10.1021/acs.chemmater.8b02212
Descripción
Sumario:[Image: see text] A method for accurately measuring the relative dielectric constant (ε(r)) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated from eutectic gallium–indium (EGaIn). The geometry of the electrode is defined by injection into microchannels to form stable structures that are nondamaging and that conform to the topology of the organic thin film. The ε(r) of a series of references and new organic materials, polymers, and fullerene derivatives was derived from impedance spectroscopy measurements for both Al and EGaIn electrodes showing the specific limitations of Al with soft, organic materials and overcoming them with EGaIn to determine their dielectric properties and provide realistic values of ε(r).