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Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phas...

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Autores principales: Wang, Xiaoshan, Wang, Zhiwei, Zhang, Jindong, Wang, Xiang, Zhang, Zhipeng, Wang, Jialiang, Zhu, Zhaohua, Li, Zhuoyao, Liu, Yao, Hu, Xuefeng, Qiu, Junwen, Hu, Guohua, Chen, Bo, Wang, Ning, He, Qiyuan, Chen, Junze, Yan, Jiaxu, Zhang, Wei, Hasan, Tawfique, Li, Shaozhou, Li, Hai, Zhang, Hua, Wang, Qiang, Huang, Xiao, Huang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6127337/
https://www.ncbi.nlm.nih.gov/pubmed/30190475
http://dx.doi.org/10.1038/s41467-018-06053-z
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author Wang, Xiaoshan
Wang, Zhiwei
Zhang, Jindong
Wang, Xiang
Zhang, Zhipeng
Wang, Jialiang
Zhu, Zhaohua
Li, Zhuoyao
Liu, Yao
Hu, Xuefeng
Qiu, Junwen
Hu, Guohua
Chen, Bo
Wang, Ning
He, Qiyuan
Chen, Junze
Yan, Jiaxu
Zhang, Wei
Hasan, Tawfique
Li, Shaozhou
Li, Hai
Zhang, Hua
Wang, Qiang
Huang, Xiao
Huang, Wei
author_facet Wang, Xiaoshan
Wang, Zhiwei
Zhang, Jindong
Wang, Xiang
Zhang, Zhipeng
Wang, Jialiang
Zhu, Zhaohua
Li, Zhuoyao
Liu, Yao
Hu, Xuefeng
Qiu, Junwen
Hu, Guohua
Chen, Bo
Wang, Ning
He, Qiyuan
Chen, Junze
Yan, Jiaxu
Zhang, Wei
Hasan, Tawfique
Li, Shaozhou
Li, Hai
Zhang, Hua
Wang, Qiang
Huang, Xiao
Huang, Wei
author_sort Wang, Xiaoshan
collection PubMed
description The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS(2) and 1T-WS(2) induces a charge redistribution in Sn and W to realize metallic Sn(0.5)W(0.5)S(2) nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS(2) nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn(0.5)W(0.5)S(2)/SnS(2) heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.
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spelling pubmed-61273372018-09-10 Realization of vertical metal semiconductor heterostructures via solution phase epitaxy Wang, Xiaoshan Wang, Zhiwei Zhang, Jindong Wang, Xiang Zhang, Zhipeng Wang, Jialiang Zhu, Zhaohua Li, Zhuoyao Liu, Yao Hu, Xuefeng Qiu, Junwen Hu, Guohua Chen, Bo Wang, Ning He, Qiyuan Chen, Junze Yan, Jiaxu Zhang, Wei Hasan, Tawfique Li, Shaozhou Li, Hai Zhang, Hua Wang, Qiang Huang, Xiao Huang, Wei Nat Commun Article The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS(2) and 1T-WS(2) induces a charge redistribution in Sn and W to realize metallic Sn(0.5)W(0.5)S(2) nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS(2) nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn(0.5)W(0.5)S(2)/SnS(2) heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors. Nature Publishing Group UK 2018-09-06 /pmc/articles/PMC6127337/ /pubmed/30190475 http://dx.doi.org/10.1038/s41467-018-06053-z Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Wang, Xiaoshan
Wang, Zhiwei
Zhang, Jindong
Wang, Xiang
Zhang, Zhipeng
Wang, Jialiang
Zhu, Zhaohua
Li, Zhuoyao
Liu, Yao
Hu, Xuefeng
Qiu, Junwen
Hu, Guohua
Chen, Bo
Wang, Ning
He, Qiyuan
Chen, Junze
Yan, Jiaxu
Zhang, Wei
Hasan, Tawfique
Li, Shaozhou
Li, Hai
Zhang, Hua
Wang, Qiang
Huang, Xiao
Huang, Wei
Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_full Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_fullStr Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_full_unstemmed Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_short Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_sort realization of vertical metal semiconductor heterostructures via solution phase epitaxy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6127337/
https://www.ncbi.nlm.nih.gov/pubmed/30190475
http://dx.doi.org/10.1038/s41467-018-06053-z
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