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Two new Rb–Ga arsenates: RbGa(HAsO(4))(2) and RbGa(2)As(HAsO(4))(6)

The crystal structures of hydro­thermally synthesized (T = 493 K, 7–9 d) rubidium gallium bis­[hydrogenarsenate(V)], RbGa(HAsO(4))(2), and rubidium digallium arsenic(V) hexa­[hydrogenarsenate(V)], RbGa(2)As(HAsO(4))(6), were solved by single-crystal X-ray diffraction. Both compounds have tetra­hedra...

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Detalles Bibliográficos
Autores principales: Schwendtner, Karolina, Kolitsch, Uwe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6127722/
https://www.ncbi.nlm.nih.gov/pubmed/30225109
http://dx.doi.org/10.1107/S2056989018011180
Descripción
Sumario:The crystal structures of hydro­thermally synthesized (T = 493 K, 7–9 d) rubidium gallium bis­[hydrogenarsenate(V)], RbGa(HAsO(4))(2), and rubidium digallium arsenic(V) hexa­[hydrogenarsenate(V)], RbGa(2)As(HAsO(4))(6), were solved by single-crystal X-ray diffraction. Both compounds have tetra­hedral–octa­hedral framework topologies. The M (+) cations are located in channels of the respective framework. RbGa(HAsO(4))(2) crystallizes in the RbFe(HPO(4))(2) structure type (R [Image: see text] c), while RbGa(2)As(HAsO(4))(6) adopts the structure type of RbAl(2)As(HAsO(4))(6) (R [Image: see text] c), which represents a modification of the RbFe(HPO(4))(2) structure type. In this modification, one third of the M (3+)O(6) octa­hedra are replaced by AsO(6) octa­hedra, and two thirds of the voids in the structure, which are usually filled by M (+) cations, remain empty to achieve charge balance.