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Two new Rb–Ga arsenates: RbGa(HAsO(4))(2) and RbGa(2)As(HAsO(4))(6)
The crystal structures of hydrothermally synthesized (T = 493 K, 7–9 d) rubidium gallium bis[hydrogenarsenate(V)], RbGa(HAsO(4))(2), and rubidium digallium arsenic(V) hexa[hydrogenarsenate(V)], RbGa(2)As(HAsO(4))(6), were solved by single-crystal X-ray diffraction. Both compounds have tetrahedra...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6127722/ https://www.ncbi.nlm.nih.gov/pubmed/30225109 http://dx.doi.org/10.1107/S2056989018011180 |
Sumario: | The crystal structures of hydrothermally synthesized (T = 493 K, 7–9 d) rubidium gallium bis[hydrogenarsenate(V)], RbGa(HAsO(4))(2), and rubidium digallium arsenic(V) hexa[hydrogenarsenate(V)], RbGa(2)As(HAsO(4))(6), were solved by single-crystal X-ray diffraction. Both compounds have tetrahedral–octahedral framework topologies. The M (+) cations are located in channels of the respective framework. RbGa(HAsO(4))(2) crystallizes in the RbFe(HPO(4))(2) structure type (R [Image: see text] c), while RbGa(2)As(HAsO(4))(6) adopts the structure type of RbAl(2)As(HAsO(4))(6) (R [Image: see text] c), which represents a modification of the RbFe(HPO(4))(2) structure type. In this modification, one third of the M (3+)O(6) octahedra are replaced by AsO(6) octahedra, and two thirds of the voids in the structure, which are usually filled by M (+) cations, remain empty to achieve charge balance. |
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