Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient e...

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Detalles Bibliográficos
Autores principales: Cushing, Scott K., Zürch, Michael, Kraus, Peter M., Carneiro, Lucas M., Lee, Angela, Chang, Hung-Tzu, Kaplan, Christopher J., Leone, Stephen R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Crystallographic Association 2018
Materias:
ARTICLES
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6133686/
https://www.ncbi.nlm.nih.gov/pubmed/30246050
http://dx.doi.org/10.1063/1.5038015

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6133686/
https://www.ncbi.nlm.nih.gov/pubmed/30246050
http://dx.doi.org/10.1063/1.5038015

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