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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We inv...

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Autores principales: Chen, Cheng, Wang, Meixiao, Wu, Jinxiong, Fu, Huixia, Yang, Haifeng, Tian, Zhen, Tu, Teng, Peng, Han, Sun, Yan, Xu, Xiang, Jiang, Juan, Schröter, Niels B. M., Li, Yiwei, Pei, Ding, Liu, Shuai, Ekahana, Sandy A., Yuan, Hongtao, Xue, Jiamin, Li, Gang, Jia, Jinfeng, Liu, Zhongkai, Yan, Binghai, Peng, Hailin, Chen, Yulin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6140625/
https://www.ncbi.nlm.nih.gov/pubmed/30225369
http://dx.doi.org/10.1126/sciadv.aat8355
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author Chen, Cheng
Wang, Meixiao
Wu, Jinxiong
Fu, Huixia
Yang, Haifeng
Tian, Zhen
Tu, Teng
Peng, Han
Sun, Yan
Xu, Xiang
Jiang, Juan
Schröter, Niels B. M.
Li, Yiwei
Pei, Ding
Liu, Shuai
Ekahana, Sandy A.
Yuan, Hongtao
Xue, Jiamin
Li, Gang
Jia, Jinfeng
Liu, Zhongkai
Yan, Binghai
Peng, Hailin
Chen, Yulin
author_facet Chen, Cheng
Wang, Meixiao
Wu, Jinxiong
Fu, Huixia
Yang, Haifeng
Tian, Zhen
Tu, Teng
Peng, Han
Sun, Yan
Xu, Xiang
Jiang, Juan
Schröter, Niels B. M.
Li, Yiwei
Pei, Ding
Liu, Shuai
Ekahana, Sandy A.
Yuan, Hongtao
Xue, Jiamin
Li, Gang
Jia, Jinfeng
Liu, Zhongkai
Yan, Binghai
Peng, Hailin
Chen, Yulin
author_sort Chen, Cheng
collection PubMed
description Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi(2)O(2)Se, with ultrahigh mobility (~2.8 × 10(5) cm(2)/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi(2)O(2)Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi(2)O(2)Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi(2)O(2)Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO(3)) further makes heterostructures between Bi(2)O(2)Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
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spelling pubmed-61406252018-09-17 Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se Chen, Cheng Wang, Meixiao Wu, Jinxiong Fu, Huixia Yang, Haifeng Tian, Zhen Tu, Teng Peng, Han Sun, Yan Xu, Xiang Jiang, Juan Schröter, Niels B. M. Li, Yiwei Pei, Ding Liu, Shuai Ekahana, Sandy A. Yuan, Hongtao Xue, Jiamin Li, Gang Jia, Jinfeng Liu, Zhongkai Yan, Binghai Peng, Hailin Chen, Yulin Sci Adv Research Articles Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi(2)O(2)Se, with ultrahigh mobility (~2.8 × 10(5) cm(2)/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi(2)O(2)Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi(2)O(2)Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi(2)O(2)Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO(3)) further makes heterostructures between Bi(2)O(2)Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers. American Association for the Advancement of Science 2018-09-14 /pmc/articles/PMC6140625/ /pubmed/30225369 http://dx.doi.org/10.1126/sciadv.aat8355 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Chen, Cheng
Wang, Meixiao
Wu, Jinxiong
Fu, Huixia
Yang, Haifeng
Tian, Zhen
Tu, Teng
Peng, Han
Sun, Yan
Xu, Xiang
Jiang, Juan
Schröter, Niels B. M.
Li, Yiwei
Pei, Ding
Liu, Shuai
Ekahana, Sandy A.
Yuan, Hongtao
Xue, Jiamin
Li, Gang
Jia, Jinfeng
Liu, Zhongkai
Yan, Binghai
Peng, Hailin
Chen, Yulin
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title_full Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title_fullStr Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title_full_unstemmed Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title_short Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
title_sort electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, bi(2)o(2)se
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6140625/
https://www.ncbi.nlm.nih.gov/pubmed/30225369
http://dx.doi.org/10.1126/sciadv.aat8355
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