Cargando…

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)(1−)(x)(MnSb)(x) alloy

We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition using the eutectic compound (GaSb)(0.59)(MnSb)(0.41) as target for sputtering. For the studied films we have observed ferromagnetism and an anomalous Hall effect above room tem...

Descripción completa

Detalles Bibliográficos
Autores principales:	Oveshnikov, Leonid N, Nekhaeva, Elena I, Kochura, Alexey V, Davydov, Alexander B, Shakhov, Mikhail A, Marenkin, Sergey F, Novodvorskii, Oleg A, Kuzmenko, Alexander P, Vasiliev, Alexander L, Aronzon, Boris A, Lahderanta, Erkki
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2018
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6142748/ https://www.ncbi.nlm.nih.gov/pubmed/30254840 http://dx.doi.org/10.3762/bjnano.9.230

Ejemplares similares

Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature
por: Oveshnikov, L. N., et al.
Publicado: (2021)

High Curie temperature ferromagnetic structures of (Sb(2)Te(3))(1−x)(MnSb(2)Te(4))(x) with x = 0.7–0.8
por: Levy, Ido, et al.
Publicado: (2023)

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates
por: Burrows, Christopher W., et al.
Publicado: (2013)

Structural and Magnetic Properties of Ni(1+x)MnSb Bulk Heusler Composite Materials
por: Govind, Bal, et al.
Publicado: (2020)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
por: Li, Li-Gong, et al.
Publicado: (2012)

Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010)

High Concentration Intrinsic Defects in MnSb(2)Te(4)
por: Xiong, Jie, et al.
Publicado: (2023)

Direct Band Gap Gallium Antimony Phosphide (GaSb(x)P(1−x)) Alloys
por: Russell, H. B., et al.
Publicado: (2016)

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021)

Superconductivity and Shubnikov - de Haas effect in polycrystalline Cd(3)As(2) thin films
por: Oveshnikov, Leonid N., et al.
Publicado: (2020)

Properties of Doped GaSb Whiskers at Low Temperatures
por: Khytruk, Igor, et al.
Publicado: (2017)

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb(14)MnSb(11) and Yb(14)MgSb(11)
por: Perez, Christopher J., et al.
Publicado: (2021)

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)

Enhanced thermoelectric properties of Zn-doped GaSb nanocomposites
por: Fu, Qiang, et al.
Publicado: (2020)

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
por: Ikyo, A. B., et al.
Publicado: (2016)

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
por: Wu, Shujie, et al.
Publicado: (2013)

Evidence for a topological excitonic insulator in InAs/GaSb bilayers
por: Du, Lingjie, et al.
Publicado: (2017)

Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
por: Zhang, Guozhao, et al.
Publicado: (2017)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
por: Rogowicz, E., et al.
Publicado: (2022)

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
por: Marchewka, Michał, et al.
Publicado: (2023)

Remote p-type Doping in GaSb/InAs Core-shell Nanowires
por: Ning, Feng, et al.
Publicado: (2015)

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes
por: Czuba, Krzysztof, et al.
Publicado: (2021)

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station
por: Nirmal Kumar, Velu, et al.
Publicado: (2016)

Observation of T(2)-like coherent optical phonons in epitaxial Ge(2)Sb(2)Te(5)/GaSb(001) films
por: Shalini, A., et al.
Publicado: (2013)

Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
por: Yanagida, Yusuke, et al.
Publicado: (2017)

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
por: Kim, Honggyu, et al.
Publicado: (2018)

Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres
por: Song, S., et al.
Publicado: (2019)

Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation
por: Lively, Michael A., et al.
Publicado: (2020)

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
por: Manzo, Sebastian, et al.
Publicado: (2022)

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy
por: Marnauza, Mikelis, et al.
Publicado: (2023)

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
por: Chen, Jianxin, et al.
Publicado: (2011)

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center
por: Faul, J, et al.
Publicado: (1993)

Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
por: Persson, Olof, et al.
Publicado: (2015)

Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
por: Li, Yuan, et al.
Publicado: (2014)

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
por: Chusovitin, Evgeniy, et al.
Publicado: (2018)

Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
por: Fang, Xuan, et al.
Publicado: (2018)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
por: Alshahrani, Dhafer, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_gbjk5vuhkj46c5pellhih0qh12