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Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018)
Electronic trap states in quantum dots limit their optoelectronics and related applications. In article number https://doi.org/10.1002/advs.201800420, Hong Chen, Han Zhang, and co‐workers report a fluorination strategy to simultaneously enhance the environmental stability and eliminate the trap stat...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145305/ http://dx.doi.org/10.1002/advs.201870055 |
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author | Tang, Xian Chen, Hong Ponraj, Joice Sophia Dhanabalan, Sathish Chander Xiao, Quanlan Fan, Dianyuan Zhang, Han |
author_facet | Tang, Xian Chen, Hong Ponraj, Joice Sophia Dhanabalan, Sathish Chander Xiao, Quanlan Fan, Dianyuan Zhang, Han |
author_sort | Tang, Xian |
collection | PubMed |
description | Electronic trap states in quantum dots limit their optoelectronics and related applications. In article number https://doi.org/10.1002/advs.201800420, Hong Chen, Han Zhang, and co‐workers report a fluorination strategy to simultaneously enhance the environmental stability and eliminate the trap states in black phosphorous quantum dots (BPQDs), setting the ground for research towards BPQD‐based nanophotonic and nanoelectronic devices. [Image: see text] |
format | Online Article Text |
id | pubmed-6145305 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-61453052018-09-24 Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) Tang, Xian Chen, Hong Ponraj, Joice Sophia Dhanabalan, Sathish Chander Xiao, Quanlan Fan, Dianyuan Zhang, Han Adv Sci (Weinh) Frontispiece Electronic trap states in quantum dots limit their optoelectronics and related applications. In article number https://doi.org/10.1002/advs.201800420, Hong Chen, Han Zhang, and co‐workers report a fluorination strategy to simultaneously enhance the environmental stability and eliminate the trap states in black phosphorous quantum dots (BPQDs), setting the ground for research towards BPQD‐based nanophotonic and nanoelectronic devices. [Image: see text] John Wiley and Sons Inc. 2018-09-19 /pmc/articles/PMC6145305/ http://dx.doi.org/10.1002/advs.201870055 Text en © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. |
spellingShingle | Frontispiece Tang, Xian Chen, Hong Ponraj, Joice Sophia Dhanabalan, Sathish Chander Xiao, Quanlan Fan, Dianyuan Zhang, Han Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title | Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title_full | Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title_fullStr | Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title_full_unstemmed | Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title_short | Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) |
title_sort | quantum dots: fluorination‐enhanced ambient stability and electronic tolerance of black phosphorus quantum dots (adv. sci. 9/2018) |
topic | Frontispiece |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145305/ http://dx.doi.org/10.1002/advs.201870055 |
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