Biomemory: Phototunable Biomemory Based on Light‐Mediated Charge Trap (Adv. Sci. 9/2018)

In article number https://doi.org/10.1002/advs.201800714, Ye Zhou, Su‐Ting Han, Vellaisamy A. L. Roy, and co‐workers report a phototunable carbon dots‐silk based resistive random access memory device. Ultraviolet illumination triggers excitons generation and subsequent photogating effect stemmed fro...

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Detalles Bibliográficos
Autores principales: Lv, Ziyu, Wang, Yan, Chen, Zhonghui, Sun, Long, Wang, Junjie, Chen, Meng, Xu, Zhenting, Liao, Qiufan, Zhou, Li, Chen, Xiaoli, Li, Jieni, Zhou, Kui, Zhou, Ye, Zeng, Yu‐Jia, Han, Su‐Ting, Roy, Vellaisamy A. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
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Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145397/
http://dx.doi.org/10.1002/advs.201870051
Descripción
Sumario:In article number https://doi.org/10.1002/advs.201800714, Ye Zhou, Su‐Ting Han, Vellaisamy A. L. Roy, and co‐workers report a phototunable carbon dots‐silk based resistive random access memory device. Ultraviolet illumination triggers excitons generation and subsequent photogating effect stemmed from trapped electrons in the active layer, ultimately decreasing the SET voltage. The photo‐enhanced charge trapping effect is considered to be in charge of the tunable resistive switching behavior. [Image: see text]

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