High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the sma...

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Detalles Bibliográficos
Autores principales: Wang, Tao, Wang, Xinqiang, Chen, Zhaoying, Sun, Xiaoxiao, Wang, Ping, Zheng, Xiantong, Rong, Xin, Yang, Liuyun, Guo, Weiwei, Wang, Ding, Cheng, Jianpeng, Lin, Xi, Li, Peng, Li, Jun, He, Xin, Zhang, Qiang, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Ge, Weikun, Zhang, Xixiang, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145405/
https://www.ncbi.nlm.nih.gov/pubmed/30250812
http://dx.doi.org/10.1002/advs.201800844

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