Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa(2)O(4) Thin Films

A single-crystalline ZnGa(2)O(4) epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal–semiconductor–metal photoconductive deep-ultraviolet (DU...

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Detalles Bibliográficos
Autores principales: Tsai, Si-Han, Basu, Sarbani, Huang, Chiung-Yi, Hsu, Liang-Ching, Lin, Yan-Gu, Horng, Ray-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145910/
https://www.ncbi.nlm.nih.gov/pubmed/30232465
http://dx.doi.org/10.1038/s41598-018-32412-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145910/
https://www.ncbi.nlm.nih.gov/pubmed/30232465
http://dx.doi.org/10.1038/s41598-018-32412-3

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