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Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa(2)O(4) Thin Films

A single-crystalline ZnGa(2)O(4) epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal–semiconductor–metal photoconductive deep-ultraviolet (DU...

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Detalles Bibliográficos
Autores principales:	Tsai, Si-Han, Basu, Sarbani, Huang, Chiung-Yi, Hsu, Liang-Ching, Lin, Yan-Gu, Horng, Ray-Hua
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145910/ https://www.ncbi.nlm.nih.gov/pubmed/30232465 http://dx.doi.org/10.1038/s41598-018-32412-3

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