Intentional polarity conversion of AlN epitaxial layers by oxygen

Nitride materials (AlN, GaN, InN and their alloys) are commonly used in optoelectronics, high-power and high-frequency electronics. Polarity is the essential characteristic of these materials: when grown along c-direction, the films may exhibit either N- or metal-polar surface, which strongly influe...

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Detalles Bibliográficos
Autores principales: Stolyarchuk, N., Markurt, T., Courville, A., March, K., Zúñiga-Pérez, J., Vennéguès, P., Albrecht, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6147946/
https://www.ncbi.nlm.nih.gov/pubmed/30237522
http://dx.doi.org/10.1038/s41598-018-32489-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6147946/
https://www.ncbi.nlm.nih.gov/pubmed/30237522
http://dx.doi.org/10.1038/s41598-018-32489-w

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