Green Light-Emitting Devices Based on Perovskite CsPbBr(3) Quantum Dots

In this paper, high quality green-emitting CsPbBr(3) quantum dots (QDs) are successfully synthesized by hot-injection method. Different injection temperatures are tested to optimize the synthesis conditions. High brightness with the photoluminescence (PL) quantum yields (QYs) up to 90% and narrow size-distribution with the full width at half-maximum (FWHM) of 18.5 nm are obtained under the optimized conditions. Green light emitting diodes (LEDs) based on the CsPbBr(3) QDs are successfully demonstrated by combining solution method with vapor deposition method. Composite films of poly[9,9-dioctylfluorene-co- N-[4-(3-methylpropyl)]-diphenylamine] (TFB) and bathocuproine (BCP) layers are chosen as the hole-transporting and the electron-transporting layers, respectively. The highly bright green QD-based light-emitting devices (QLEDs) showing maximum luminance up to 46,000 cd/m(2) with a low turn on voltage of 2.3 V, and peak external quantum efficiency (EQE) of 5.7%, corresponding to 19.9 cd/A in luminance efficiency. These devices also show high color purity for electroluminescence (EL) with FWHM <20 nm, and no redshift and broadening with increasing voltage as well as a spectral match between PL and EL.