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An orbitally derived single-atom magnetic memory

A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic...

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Autores principales: Kiraly, Brian, Rudenko, Alexander N., van Weerdenburg, Werner M. J., Wegner, Daniel, Katsnelson, Mikhail I., Khajetoorians, Alexander A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6156418/
https://www.ncbi.nlm.nih.gov/pubmed/30254221
http://dx.doi.org/10.1038/s41467-018-06337-4
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author Kiraly, Brian
Rudenko, Alexander N.
van Weerdenburg, Werner M. J.
Wegner, Daniel
Katsnelson, Mikhail I.
Khajetoorians, Alexander A.
author_facet Kiraly, Brian
Rudenko, Alexander N.
van Weerdenburg, Werner M. J.
Wegner, Daniel
Katsnelson, Mikhail I.
Khajetoorians, Alexander A.
author_sort Kiraly, Brian
collection PubMed
description A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic gating or exchange-driven magnetic coupling. Here, we show a previously unobserved mechanism for single-atom magnetic storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Ab initio calculations reveal that distance-dependent screening from the BP surface stabilizes the two distinct valencies, each with a unique orbital population, total magnetic moment, and spatial charge density. Excellent correspondence between the measured and predicted charge densities reveal that such orbital configurations can be accessed and manipulated without a spin-sensitive readout mechanism. This orbital memory derives stability from the energetic barrier to atomic relaxation, demonstrating the potential for high-temperature single-atom information storage.
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spelling pubmed-61564182018-09-27 An orbitally derived single-atom magnetic memory Kiraly, Brian Rudenko, Alexander N. van Weerdenburg, Werner M. J. Wegner, Daniel Katsnelson, Mikhail I. Khajetoorians, Alexander A. Nat Commun Article A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic gating or exchange-driven magnetic coupling. Here, we show a previously unobserved mechanism for single-atom magnetic storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Ab initio calculations reveal that distance-dependent screening from the BP surface stabilizes the two distinct valencies, each with a unique orbital population, total magnetic moment, and spatial charge density. Excellent correspondence between the measured and predicted charge densities reveal that such orbital configurations can be accessed and manipulated without a spin-sensitive readout mechanism. This orbital memory derives stability from the energetic barrier to atomic relaxation, demonstrating the potential for high-temperature single-atom information storage. Nature Publishing Group UK 2018-09-25 /pmc/articles/PMC6156418/ /pubmed/30254221 http://dx.doi.org/10.1038/s41467-018-06337-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kiraly, Brian
Rudenko, Alexander N.
van Weerdenburg, Werner M. J.
Wegner, Daniel
Katsnelson, Mikhail I.
Khajetoorians, Alexander A.
An orbitally derived single-atom magnetic memory
title An orbitally derived single-atom magnetic memory
title_full An orbitally derived single-atom magnetic memory
title_fullStr An orbitally derived single-atom magnetic memory
title_full_unstemmed An orbitally derived single-atom magnetic memory
title_short An orbitally derived single-atom magnetic memory
title_sort orbitally derived single-atom magnetic memory
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6156418/
https://www.ncbi.nlm.nih.gov/pubmed/30254221
http://dx.doi.org/10.1038/s41467-018-06337-4
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