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Crystalline and oxide phases revealed and formed on InSb(111)B
Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spec...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6158213/ https://www.ncbi.nlm.nih.gov/pubmed/30258079 http://dx.doi.org/10.1038/s41598-018-32723-5 |
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author | Mäkelä, Jaakko Jahanshah Rad, Zahra Sadat Lehtiö, Juha-Pekka Kuzmin, Mikhail Punkkinen, Marko P. J. Laukkanen, Pekka Kokko, Kalevi |
author_facet | Mäkelä, Jaakko Jahanshah Rad, Zahra Sadat Lehtiö, Juha-Pekka Kuzmin, Mikhail Punkkinen, Marko P. J. Laukkanen, Pekka Kokko, Kalevi |
author_sort | Mäkelä, Jaakko |
collection | PubMed |
description | Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum. |
format | Online Article Text |
id | pubmed-6158213 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-61582132018-09-28 Crystalline and oxide phases revealed and formed on InSb(111)B Mäkelä, Jaakko Jahanshah Rad, Zahra Sadat Lehtiö, Juha-Pekka Kuzmin, Mikhail Punkkinen, Marko P. J. Laukkanen, Pekka Kokko, Kalevi Sci Rep Article Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum. Nature Publishing Group UK 2018-09-26 /pmc/articles/PMC6158213/ /pubmed/30258079 http://dx.doi.org/10.1038/s41598-018-32723-5 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Mäkelä, Jaakko Jahanshah Rad, Zahra Sadat Lehtiö, Juha-Pekka Kuzmin, Mikhail Punkkinen, Marko P. J. Laukkanen, Pekka Kokko, Kalevi Crystalline and oxide phases revealed and formed on InSb(111)B |
title | Crystalline and oxide phases revealed and formed on InSb(111)B |
title_full | Crystalline and oxide phases revealed and formed on InSb(111)B |
title_fullStr | Crystalline and oxide phases revealed and formed on InSb(111)B |
title_full_unstemmed | Crystalline and oxide phases revealed and formed on InSb(111)B |
title_short | Crystalline and oxide phases revealed and formed on InSb(111)B |
title_sort | crystalline and oxide phases revealed and formed on insb(111)b |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6158213/ https://www.ncbi.nlm.nih.gov/pubmed/30258079 http://dx.doi.org/10.1038/s41598-018-32723-5 |
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