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Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Singapore
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6160381/ https://www.ncbi.nlm.nih.gov/pubmed/30467647 http://dx.doi.org/10.1186/s40580-018-0158-x |
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author | You, Jiawen Hossain, Md Delowar Luo, Zhengtang |
author_facet | You, Jiawen Hossain, Md Delowar Luo, Zhengtang |
author_sort | You, Jiawen |
collection | PubMed |
description | Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed. |
format | Online Article Text |
id | pubmed-6160381 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Springer Singapore |
record_format | MEDLINE/PubMed |
spelling | pubmed-61603812018-11-15 Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology You, Jiawen Hossain, Md Delowar Luo, Zhengtang Nano Converg Review Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed. Springer Singapore 2018-09-28 /pmc/articles/PMC6160381/ /pubmed/30467647 http://dx.doi.org/10.1186/s40580-018-0158-x Text en © The Author(s) 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Review You, Jiawen Hossain, Md Delowar Luo, Zhengtang Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title | Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title_full | Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title_fullStr | Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title_full_unstemmed | Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title_short | Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
title_sort | synthesis of 2d transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6160381/ https://www.ncbi.nlm.nih.gov/pubmed/30467647 http://dx.doi.org/10.1186/s40580-018-0158-x |
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