Fabrication and Characterization of a High-Performance Multi-Annular Backscattered Electron Detector for Desktop SEM †

Scanning electron microscopy has been developed for topographic analysis at the nanometer scale. Herein, we present a silicon p-n diode with multi-annular configuration to detect backscattering electrons (BSE) in a homemade desktop scanning electron microscope (SEM). The multi-annular configuration...

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Detalles Bibliográficos
Autores principales: Lin, Wei-Ruei, Chuang, Yun-Ju, Lee, Chih-Hao, Tseng, Fan-Gang, Chen, Fu-Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163608/
https://www.ncbi.nlm.nih.gov/pubmed/30223459
http://dx.doi.org/10.3390/s18093093

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163608/
https://www.ncbi.nlm.nih.gov/pubmed/30223459
http://dx.doi.org/10.3390/s18093093

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