Cargando…

Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC

A novel composite was synthesized by mixing La(0.1)Sr(0.9)MnO(3−δ) (LSM) with Ce(0.8)Sm(0.2)O(2−δ) (SDC) for the functional layer of low temperature solid oxide fuel cell (LT-SOFC). Though LSM, a highly electronic conducting semiconductor, was used in the functional layer, the fuel cell device could...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Zhaoqing, Wang, Xunying, Xu, Zhaoyun, Deng, Hui, Dong, Wenjing, Wang, Baoyuan, Feng, Chu, Liu, Xueqi, Wang, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164086/
https://www.ncbi.nlm.nih.gov/pubmed/30154330
http://dx.doi.org/10.3390/ma11091549
_version_ 1783359516457304064
author Wang, Zhaoqing
Wang, Xunying
Xu, Zhaoyun
Deng, Hui
Dong, Wenjing
Wang, Baoyuan
Feng, Chu
Liu, Xueqi
Wang, Hao
author_facet Wang, Zhaoqing
Wang, Xunying
Xu, Zhaoyun
Deng, Hui
Dong, Wenjing
Wang, Baoyuan
Feng, Chu
Liu, Xueqi
Wang, Hao
author_sort Wang, Zhaoqing
collection PubMed
description A novel composite was synthesized by mixing La(0.1)Sr(0.9)MnO(3−δ) (LSM) with Ce(0.8)Sm(0.2)O(2−δ) (SDC) for the functional layer of low temperature solid oxide fuel cell (LT-SOFC). Though LSM, a highly electronic conducting semiconductor, was used in the functional layer, the fuel cell device could reach OCVs higher than 1.0 V without short-circuit problem. A typical diode or rectification effect was observed when an external electric force was supplied on the device under fuel cell atmosphere, which indicated the existence of a junction that prevented the device from short-circuit problem. The optimum ratio of LSM:SDC = 1:2 was found for the LT-SOFC to reach the highest power density of 742 mW·cm(−2) under 550 °C The electrochemical impedance spectroscopy data highlighted that introducing LSM into SDC electrolyte layer not only decreased charge-transfer resistances from 0.66 Ω·cm(2) for SDC to 0.47–0.49 Ω·cm(2) for LSM-SDC composite, but also decreased the activation energy of ionic conduction from 0.55 to 0.20 eV.
format Online
Article
Text
id pubmed-6164086
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-61640862018-10-12 Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC Wang, Zhaoqing Wang, Xunying Xu, Zhaoyun Deng, Hui Dong, Wenjing Wang, Baoyuan Feng, Chu Liu, Xueqi Wang, Hao Materials (Basel) Article A novel composite was synthesized by mixing La(0.1)Sr(0.9)MnO(3−δ) (LSM) with Ce(0.8)Sm(0.2)O(2−δ) (SDC) for the functional layer of low temperature solid oxide fuel cell (LT-SOFC). Though LSM, a highly electronic conducting semiconductor, was used in the functional layer, the fuel cell device could reach OCVs higher than 1.0 V without short-circuit problem. A typical diode or rectification effect was observed when an external electric force was supplied on the device under fuel cell atmosphere, which indicated the existence of a junction that prevented the device from short-circuit problem. The optimum ratio of LSM:SDC = 1:2 was found for the LT-SOFC to reach the highest power density of 742 mW·cm(−2) under 550 °C The electrochemical impedance spectroscopy data highlighted that introducing LSM into SDC electrolyte layer not only decreased charge-transfer resistances from 0.66 Ω·cm(2) for SDC to 0.47–0.49 Ω·cm(2) for LSM-SDC composite, but also decreased the activation energy of ionic conduction from 0.55 to 0.20 eV. MDPI 2018-08-28 /pmc/articles/PMC6164086/ /pubmed/30154330 http://dx.doi.org/10.3390/ma11091549 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Zhaoqing
Wang, Xunying
Xu, Zhaoyun
Deng, Hui
Dong, Wenjing
Wang, Baoyuan
Feng, Chu
Liu, Xueqi
Wang, Hao
Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title_full Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title_fullStr Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title_full_unstemmed Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title_short Semiconductor-Ionic Nanocomposite La(0.1)Sr(0.9)MnO(3−δ)-Ce(0.8)Sm(0.2)O(2−δ) Functional Layer for High Performance Low Temperature SOFC
title_sort semiconductor-ionic nanocomposite la(0.1)sr(0.9)mno(3−δ)-ce(0.8)sm(0.2)o(2−δ) functional layer for high performance low temperature sofc
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164086/
https://www.ncbi.nlm.nih.gov/pubmed/30154330
http://dx.doi.org/10.3390/ma11091549
work_keys_str_mv AT wangzhaoqing semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT wangxunying semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT xuzhaoyun semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT denghui semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT dongwenjing semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT wangbaoyuan semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT fengchu semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT liuxueqi semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc
AT wanghao semiconductorionicnanocompositela01sr09mno3dce08sm02o2dfunctionallayerforhighperformancelowtemperaturesofc