Cargando…
Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology
We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene’s conductivity due to the form...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164283/ https://www.ncbi.nlm.nih.gov/pubmed/30142949 http://dx.doi.org/10.3390/s18092774 |
_version_ | 1783359562928095232 |
---|---|
author | Kam, Kevin A. Tengan, Brianne I. C. Hayashi, Cody K. Ordonez, Richard C. Garmire, David G. |
author_facet | Kam, Kevin A. Tengan, Brianne I. C. Hayashi, Cody K. Ordonez, Richard C. Garmire, David G. |
author_sort | Kam, Kevin A. |
collection | PubMed |
description | We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene’s conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm(2)/Vs and 154.6 cm(2)/Vs, respectively, and a Dirac voltage <5 V. |
format | Online Article Text |
id | pubmed-6164283 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-61642832018-10-10 Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology Kam, Kevin A. Tengan, Brianne I. C. Hayashi, Cody K. Ordonez, Richard C. Garmire, David G. Sensors (Basel) Article We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene’s conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm(2)/Vs and 154.6 cm(2)/Vs, respectively, and a Dirac voltage <5 V. MDPI 2018-08-23 /pmc/articles/PMC6164283/ /pubmed/30142949 http://dx.doi.org/10.3390/s18092774 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kam, Kevin A. Tengan, Brianne I. C. Hayashi, Cody K. Ordonez, Richard C. Garmire, David G. Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title | Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title_full | Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title_fullStr | Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title_full_unstemmed | Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title_short | Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology |
title_sort | polar organic gate dielectrics for graphene field-effect transistor-based sensor technology |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164283/ https://www.ncbi.nlm.nih.gov/pubmed/30142949 http://dx.doi.org/10.3390/s18092774 |
work_keys_str_mv | AT kamkevina polarorganicgatedielectricsforgraphenefieldeffecttransistorbasedsensortechnology AT tenganbrianneic polarorganicgatedielectricsforgraphenefieldeffecttransistorbasedsensortechnology AT hayashicodyk polarorganicgatedielectricsforgraphenefieldeffecttransistorbasedsensortechnology AT ordonezrichardc polarorganicgatedielectricsforgraphenefieldeffecttransistorbasedsensortechnology AT garmiredavidg polarorganicgatedielectricsforgraphenefieldeffecttransistorbasedsensortechnology |