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Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Approximately 25 μm Pb(Mg(1/3)Nb(2/3))O(3)–PbTiO(3) (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this d...

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Detalles Bibliográficos
Autores principales: Zhang, Tao, Ou-Yang, Jun, Yang, Xiaofei, Zhu, Benpeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6165122/
https://www.ncbi.nlm.nih.gov/pubmed/30189636
http://dx.doi.org/10.3390/ma11091621
Descripción
Sumario:Approximately 25 μm Pb(Mg(1/3)Nb(2/3))O(3)–PbTiO(3) (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.