High-sensitive and fast response to 255 nm deep-UV light of CH(3)NH(3)PbX(3) (X = Cl, Br, I) bulk crystals

Deep-UV light detection has important application in surveillance and homeland security regions. CH(3)NH(3)PbX(3) (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Zhaojun, Zheng, Wei, Lin, Richeng, Huang, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170544/
https://www.ncbi.nlm.nih.gov/pubmed/30839706
http://dx.doi.org/10.1098/rsos.180905
Descripción
Sumario:Deep-UV light detection has important application in surveillance and homeland security regions. CH(3)NH(3)PbX(3) (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH(3)NH(3)PbX(3) (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–10(3) times higher than MgZnO and Ga(2)O(3) detectors, and their response speeds are 10(3) times faster than Ga(2)O(3) and ZnO detectors. These results indicate a new promising route for deep-UV detection.

Ejemplares similares