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Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we r...

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Detalles Bibliográficos
Autores principales: Liao, Mengzhou, Wu, Ze-Wen, Du, Luojun, Zhang, Tingting, Wei, Zheng, Zhu, Jianqi, Yu, Hua, Tang, Jian, Gu, Lin, Xing, Yanxia, Yang, Rong, Shi, Dongxia, Yao, Yugui, Zhang, Guangyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172227/
https://www.ncbi.nlm.nih.gov/pubmed/30287809
http://dx.doi.org/10.1038/s41467-018-06555-w
Descripción
Sumario:Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS(2)/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS(2)/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS(2) devices as well as other TMDCs devices contacted by graphene.