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Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we r...

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Autores principales: Liao, Mengzhou, Wu, Ze-Wen, Du, Luojun, Zhang, Tingting, Wei, Zheng, Zhu, Jianqi, Yu, Hua, Tang, Jian, Gu, Lin, Xing, Yanxia, Yang, Rong, Shi, Dongxia, Yao, Yugui, Zhang, Guangyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172227/
https://www.ncbi.nlm.nih.gov/pubmed/30287809
http://dx.doi.org/10.1038/s41467-018-06555-w
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author Liao, Mengzhou
Wu, Ze-Wen
Du, Luojun
Zhang, Tingting
Wei, Zheng
Zhu, Jianqi
Yu, Hua
Tang, Jian
Gu, Lin
Xing, Yanxia
Yang, Rong
Shi, Dongxia
Yao, Yugui
Zhang, Guangyu
author_facet Liao, Mengzhou
Wu, Ze-Wen
Du, Luojun
Zhang, Tingting
Wei, Zheng
Zhu, Jianqi
Yu, Hua
Tang, Jian
Gu, Lin
Xing, Yanxia
Yang, Rong
Shi, Dongxia
Yao, Yugui
Zhang, Guangyu
author_sort Liao, Mengzhou
collection PubMed
description Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS(2)/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS(2)/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS(2) devices as well as other TMDCs devices contacted by graphene.
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spelling pubmed-61722272018-10-09 Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions Liao, Mengzhou Wu, Ze-Wen Du, Luojun Zhang, Tingting Wei, Zheng Zhu, Jianqi Yu, Hua Tang, Jian Gu, Lin Xing, Yanxia Yang, Rong Shi, Dongxia Yao, Yugui Zhang, Guangyu Nat Commun Article Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS(2)/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS(2)/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS(2) devices as well as other TMDCs devices contacted by graphene. Nature Publishing Group UK 2018-10-04 /pmc/articles/PMC6172227/ /pubmed/30287809 http://dx.doi.org/10.1038/s41467-018-06555-w Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Liao, Mengzhou
Wu, Ze-Wen
Du, Luojun
Zhang, Tingting
Wei, Zheng
Zhu, Jianqi
Yu, Hua
Tang, Jian
Gu, Lin
Xing, Yanxia
Yang, Rong
Shi, Dongxia
Yao, Yugui
Zhang, Guangyu
Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title_full Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title_fullStr Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title_full_unstemmed Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title_short Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
title_sort twist angle-dependent conductivities across mos(2)/graphene heterojunctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172227/
https://www.ncbi.nlm.nih.gov/pubmed/30287809
http://dx.doi.org/10.1038/s41467-018-06555-w
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