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Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions
Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we r...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172227/ https://www.ncbi.nlm.nih.gov/pubmed/30287809 http://dx.doi.org/10.1038/s41467-018-06555-w |
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author | Liao, Mengzhou Wu, Ze-Wen Du, Luojun Zhang, Tingting Wei, Zheng Zhu, Jianqi Yu, Hua Tang, Jian Gu, Lin Xing, Yanxia Yang, Rong Shi, Dongxia Yao, Yugui Zhang, Guangyu |
author_facet | Liao, Mengzhou Wu, Ze-Wen Du, Luojun Zhang, Tingting Wei, Zheng Zhu, Jianqi Yu, Hua Tang, Jian Gu, Lin Xing, Yanxia Yang, Rong Shi, Dongxia Yao, Yugui Zhang, Guangyu |
author_sort | Liao, Mengzhou |
collection | PubMed |
description | Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS(2)/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS(2)/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS(2) devices as well as other TMDCs devices contacted by graphene. |
format | Online Article Text |
id | pubmed-6172227 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-61722272018-10-09 Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions Liao, Mengzhou Wu, Ze-Wen Du, Luojun Zhang, Tingting Wei, Zheng Zhu, Jianqi Yu, Hua Tang, Jian Gu, Lin Xing, Yanxia Yang, Rong Shi, Dongxia Yao, Yugui Zhang, Guangyu Nat Commun Article Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS(2)/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS(2)/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS(2) devices as well as other TMDCs devices contacted by graphene. Nature Publishing Group UK 2018-10-04 /pmc/articles/PMC6172227/ /pubmed/30287809 http://dx.doi.org/10.1038/s41467-018-06555-w Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Liao, Mengzhou Wu, Ze-Wen Du, Luojun Zhang, Tingting Wei, Zheng Zhu, Jianqi Yu, Hua Tang, Jian Gu, Lin Xing, Yanxia Yang, Rong Shi, Dongxia Yao, Yugui Zhang, Guangyu Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title | Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title_full | Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title_fullStr | Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title_full_unstemmed | Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title_short | Twist angle-dependent conductivities across MoS(2)/graphene heterojunctions |
title_sort | twist angle-dependent conductivities across mos(2)/graphene heterojunctions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172227/ https://www.ncbi.nlm.nih.gov/pubmed/30287809 http://dx.doi.org/10.1038/s41467-018-06555-w |
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