Data related to the nanoscale structural and compositional evolution in resistance change memories

The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switc...

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Detalles Bibliográficos
Autores principales: Ahmed, Taimur, Walia, Sumeet, Mayes, Edwin L.H., Ramanathan, Rajesh, Guagliardo, Paul, Bansal, Vipul, Bhaskaran, Madhu, Yang, J. Joshua, Sriram, Sharath
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2018
Materias:
Engineering
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6176844/
https://www.ncbi.nlm.nih.gov/pubmed/30310835
http://dx.doi.org/10.1016/j.dib.2018.09.087
Descripción
Sumario:The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

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