Data related to the nanoscale structural and compositional evolution in resistance change memories

The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switc...

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Autores principales: Ahmed, Taimur, Walia, Sumeet, Mayes, Edwin L.H., Ramanathan, Rajesh, Guagliardo, Paul, Bansal, Vipul, Bhaskaran, Madhu, Yang, J. Joshua, Sriram, Sharath
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2018
Materias:
Engineering
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6176844/
https://www.ncbi.nlm.nih.gov/pubmed/30310835
http://dx.doi.org/10.1016/j.dib.2018.09.087
_version_ 1783361761336885248
author Ahmed, Taimur
Walia, Sumeet
Mayes, Edwin L.H.
Ramanathan, Rajesh
Guagliardo, Paul
Bansal, Vipul
Bhaskaran, Madhu
Yang, J. Joshua
Sriram, Sharath
author_facet Ahmed, Taimur
Walia, Sumeet
Mayes, Edwin L.H.
Ramanathan, Rajesh
Guagliardo, Paul
Bansal, Vipul
Bhaskaran, Madhu
Yang, J. Joshua
Sriram, Sharath
author_sort Ahmed, Taimur
collection PubMed
description The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.
format Online
Article
Text
id pubmed-6176844
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher Elsevier
record_format MEDLINE/PubMed
spelling pubmed-61768442018-10-11 Data related to the nanoscale structural and compositional evolution in resistance change memories Ahmed, Taimur Walia, Sumeet Mayes, Edwin L.H. Ramanathan, Rajesh Guagliardo, Paul Bansal, Vipul Bhaskaran, Madhu Yang, J. Joshua Sriram, Sharath Data Brief Engineering The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented. Elsevier 2018-10-03 /pmc/articles/PMC6176844/ /pubmed/30310835 http://dx.doi.org/10.1016/j.dib.2018.09.087 Text en © 2018 The Authors http://creativecommons.org/licenses/by/4.0/ This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Engineering
Ahmed, Taimur
Walia, Sumeet
Mayes, Edwin L.H.
Ramanathan, Rajesh
Guagliardo, Paul
Bansal, Vipul
Bhaskaran, Madhu
Yang, J. Joshua
Sriram, Sharath
Data related to the nanoscale structural and compositional evolution in resistance change memories
title Data related to the nanoscale structural and compositional evolution in resistance change memories
title_full Data related to the nanoscale structural and compositional evolution in resistance change memories
title_fullStr Data related to the nanoscale structural and compositional evolution in resistance change memories
title_full_unstemmed Data related to the nanoscale structural and compositional evolution in resistance change memories
title_short Data related to the nanoscale structural and compositional evolution in resistance change memories
title_sort data related to the nanoscale structural and compositional evolution in resistance change memories
topic Engineering
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6176844/
https://www.ncbi.nlm.nih.gov/pubmed/30310835
http://dx.doi.org/10.1016/j.dib.2018.09.087
work_keys_str_mv AT ahmedtaimur datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT waliasumeet datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT mayesedwinlh datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT ramanathanrajesh datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT guagliardopaul datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT bansalvipul datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT bhaskaranmadhu datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT yangjjoshua datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories
AT sriramsharath datarelatedtothenanoscalestructuralandcompositionalevolutioninresistancechangememories

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