Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by...

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Detalles Bibliográficos
Autores principales: Chen, Shupeng, Liu, Hongxia, Wang, Shulong, Li, Wei, Wang, Xing, Zhao, Lu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6185875/
https://www.ncbi.nlm.nih.gov/pubmed/30315380
http://dx.doi.org/10.1186/s11671-018-2723-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6185875/
https://www.ncbi.nlm.nih.gov/pubmed/30315380
http://dx.doi.org/10.1186/s11671-018-2723-y

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