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CH(3)NH(3)PbX(3) (X = I, Br) encapsulated in silicon carbide/carbon nanotube as advanced diodes

We employ first-principles density functional theory (DFT) calculations to study CH(3)NH(3)PbX(3) (X = I, Br) and its encapsulation into the silicon carbide nanotube and carbon nanotube (CNT). Our results indicate that these devices show diode behaviors which act on negative bias voltage but do not...

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Detalles Bibliográficos
Autores principales:	Zhang, Lishu, Dai, Xinyue, Li, Tao, Li, Jie, Li, Hui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6185940/ https://www.ncbi.nlm.nih.gov/pubmed/30315191 http://dx.doi.org/10.1038/s41598-018-33668-5

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