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Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floa...

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Detalles Bibliográficos
Autores principales: Han, Ke, Guo, Xubing, Smith, Stewart, Deng, Zhongliang, Li, Wuyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187246/
https://www.ncbi.nlm.nih.gov/pubmed/30424323
http://dx.doi.org/10.3390/mi9080390
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author Han, Ke
Guo, Xubing
Smith, Stewart
Deng, Zhongliang
Li, Wuyu
author_facet Han, Ke
Guo, Xubing
Smith, Stewart
Deng, Zhongliang
Li, Wuyu
author_sort Han, Ke
collection PubMed
description This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.
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spelling pubmed-61872462018-11-01 Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification Han, Ke Guo, Xubing Smith, Stewart Deng, Zhongliang Li, Wuyu Micromachines (Basel) Article This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved. MDPI 2018-08-06 /pmc/articles/PMC6187246/ /pubmed/30424323 http://dx.doi.org/10.3390/mi9080390 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Han, Ke
Guo, Xubing
Smith, Stewart
Deng, Zhongliang
Li, Wuyu
Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title_full Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title_fullStr Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title_full_unstemmed Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title_short Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
title_sort novel high-capacitance-ratio mems switch: design, analysis and performance verification
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187246/
https://www.ncbi.nlm.nih.gov/pubmed/30424323
http://dx.doi.org/10.3390/mi9080390
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