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A Low Power Energy-Efficient Precision CMOS Temperature Sensor †

This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode...

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Detalles Bibliográficos
Autores principales: Wei, Rongshan, Bao, Xiaotian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187263/
https://www.ncbi.nlm.nih.gov/pubmed/30424190
http://dx.doi.org/10.3390/mi9060257
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author Wei, Rongshan
Bao, Xiaotian
author_facet Wei, Rongshan
Bao, Xiaotian
author_sort Wei, Rongshan
collection PubMed
description This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit. The first-order fitting and third-order fitting are used to calibrate the output results. On the basis of simulation results, the sensor achieves 3σ-inaccuracies of +0.18/−0.13 °C from −55 °C to +125 °C. Measurement results demonstrate sensor 3σ-inaccuracies of ±0.2 °C from 0 °C to +100 °C. The circuit is implemented in 0.18 μm CMOS, and consumes 6.1 μA with a 1.8 V supply voltage.
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spelling pubmed-61872632018-11-01 A Low Power Energy-Efficient Precision CMOS Temperature Sensor † Wei, Rongshan Bao, Xiaotian Micromachines (Basel) Article This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit. The first-order fitting and third-order fitting are used to calibrate the output results. On the basis of simulation results, the sensor achieves 3σ-inaccuracies of +0.18/−0.13 °C from −55 °C to +125 °C. Measurement results demonstrate sensor 3σ-inaccuracies of ±0.2 °C from 0 °C to +100 °C. The circuit is implemented in 0.18 μm CMOS, and consumes 6.1 μA with a 1.8 V supply voltage. MDPI 2018-05-24 /pmc/articles/PMC6187263/ /pubmed/30424190 http://dx.doi.org/10.3390/mi9060257 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wei, Rongshan
Bao, Xiaotian
A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title_full A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title_fullStr A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title_full_unstemmed A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title_short A Low Power Energy-Efficient Precision CMOS Temperature Sensor †
title_sort low power energy-efficient precision cmos temperature sensor †
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187263/
https://www.ncbi.nlm.nih.gov/pubmed/30424190
http://dx.doi.org/10.3390/mi9060257
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