On AC-Field-Induced Nonlinear Electroosmosis next to the Sharp Corner-Field-Singularity of Leaky Dielectric Blocks and Its Application in on-Chip Micro-Mixing

Induced-charge electroosmosis has attracted lots of attention from the microfluidic community over the past decade. Most previous researches on this subject focused on induced-charge electroosmosis (ICEO) vortex streaming actuated on ideally polarizable surfaces immersed in electrolyte solutions. Starting from this point, we conduct herein a linear asymptotic analysis on nonlinear electroosmotic flow next to leaky dielectric blocks of arbitrary electrical conductivity and dielectric permittivity in harmonic AC electric fields, and theoretically demonstrate that observable ICEO fluid motion can be generated at high field frequencies in the vicinity of nearly insulating semiconductors, a very low electrical conductivity, of which can evidently increase the double-layer relaxation frequency (inversely proportional to the solid permittivity) to be much higher than the typical reciprocal RC time constant for induced double-layer charging on ideally polarizable surfaces. A computational model is developed to study the feasibility of this high-frequency vortex flow field of ICEO for sample mixing in microfluidics, in which the usage of AC voltage signal at high field frequencies may be beneficial to suppress electrochemical reactions to some extent. The influence of various parameters for developing an efficient mixer is investigated, and an integrated arrangement of semiconductor block array is suggested for achieving a reliable mixing performance at relatively high sample fluxes. Our physical demonstration with high-frequency ICEO next to leaky dielectric blocks using a simple channel structure offers valuable insights into the design of high-throughput micromixers for a variety of lab-on-a-chip applications.