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Microplasma Field Effect Transistors

Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an...

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Detalles Bibliográficos
Autores principales: Tabib-Azar, Massood, Pai, Pradeep
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189715/
http://dx.doi.org/10.3390/mi8040117
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author Tabib-Azar, Massood
Pai, Pradeep
author_facet Tabib-Azar, Massood
Pai, Pradeep
author_sort Tabib-Azar, Massood
collection PubMed
description Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an emphasis on new architectures that have evolved during the past seven years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1–10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed.
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spelling pubmed-61897152018-11-01 Microplasma Field Effect Transistors Tabib-Azar, Massood Pai, Pradeep Micromachines (Basel) Review Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an emphasis on new architectures that have evolved during the past seven years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1–10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed. MDPI 2017-04-05 /pmc/articles/PMC6189715/ http://dx.doi.org/10.3390/mi8040117 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Tabib-Azar, Massood
Pai, Pradeep
Microplasma Field Effect Transistors
title Microplasma Field Effect Transistors
title_full Microplasma Field Effect Transistors
title_fullStr Microplasma Field Effect Transistors
title_full_unstemmed Microplasma Field Effect Transistors
title_short Microplasma Field Effect Transistors
title_sort microplasma field effect transistors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189715/
http://dx.doi.org/10.3390/mi8040117
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