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Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide
A nano-patterning approach on silicon dioxide (SiO(2)) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL)...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189962/ http://dx.doi.org/10.3390/mi8010013 |