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Fabrication of SiN(x) Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiN(x)) is often used as a dielectric barrier layer in DBD due to its excellent chemical ine...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190089/ https://www.ncbi.nlm.nih.gov/pubmed/30404403 http://dx.doi.org/10.3390/mi7120232 |