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RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates
We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWH...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190226/ http://dx.doi.org/10.3390/mi8050148 |