Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements

We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al(0.75)Ga(0.25)As layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with T(C) ~85 K) with integrated electrical probes are realiz...

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Detalles Bibliográficos
Autores principales: Lee, Jae-Hyun, Park, Seondo, Yang, Chanuk, Choi, Hyung Kook, Cho, Myung Rae, Cho, Sung Un, Park, Yun Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190464/
https://www.ncbi.nlm.nih.gov/pubmed/30404395
http://dx.doi.org/10.3390/mi7120223
Descripción
Sumario:We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al(0.75)Ga(0.25)As layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with T(C) ~85 K) with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer. From finite element analysis, symmetrically placed and serpentine-shaped electrical leads induce minimal thermal stress at low temperatures. From magnetotransport measurements, changes in magnetic anisotropy are readily observed.

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