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A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contac...

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Detalles Bibliográficos
Autores principales:	Ngo, Ha-Duong, Mukhopadhyay, Biswajit, Mackowiak, Piotr, Kröhnert, Kevin, Ehrmann, Oswin, Lang, Klaus-Dieter
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190469/ https://www.ncbi.nlm.nih.gov/pubmed/30404366 http://dx.doi.org/10.3390/mi7100193

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