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Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance

Atomic-level structure engineering can substantially change the chemical and physical properties of materials. However, the effects of structure engineering on the capacitive properties of electrode materials at the atomic scale are poorly understood. Fast transport of ions and electrons to all acti...

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Autores principales: Ling, Tao, Da, Pengfei, Zheng, Xueli, Ge, Binghui, Hu, Zhenpeng, Wu, Mengying, Du, Xi-Wen, Hu, Wen-Bin, Jaroniec, Mietek, Qiao, Shi-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6195339/
https://www.ncbi.nlm.nih.gov/pubmed/30345366
http://dx.doi.org/10.1126/sciadv.aau6261
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author Ling, Tao
Da, Pengfei
Zheng, Xueli
Ge, Binghui
Hu, Zhenpeng
Wu, Mengying
Du, Xi-Wen
Hu, Wen-Bin
Jaroniec, Mietek
Qiao, Shi-Zhang
author_facet Ling, Tao
Da, Pengfei
Zheng, Xueli
Ge, Binghui
Hu, Zhenpeng
Wu, Mengying
Du, Xi-Wen
Hu, Wen-Bin
Jaroniec, Mietek
Qiao, Shi-Zhang
author_sort Ling, Tao
collection PubMed
description Atomic-level structure engineering can substantially change the chemical and physical properties of materials. However, the effects of structure engineering on the capacitive properties of electrode materials at the atomic scale are poorly understood. Fast transport of ions and electrons to all active sites of electrode materials remains a grand challenge. Here, we report the radical modification of the pseudocapacitive properties of an oxide material, Zn(x)Co(1−x)O, via atomic-level structure engineering, which changes its dominant charge storage mechanism from surface redox reactions to ion intercalation into bulk material. Fast ion and electron transports are simultaneously achieved in this mixed oxide, increasing its capacity almost to the theoretical limit. The resultant Zn(x)Co(1−x)O exhibits high-rate performance with capacitance up to 450 F g(−1) at a scan rate of 1 V s(−1), competing with the state-of-the-art transition metal carbides. A symmetric device assembled with Zn(x)Co(1−x)O achieves an energy density of 67.3 watt-hour kg(−1) at a power density of 1.67 kW kg(−1), which is the highest value ever reported for symmetric pseudocapacitors. Our finding suggests that the rational design of electrode materials at the atomic scale opens a new opportunity for achieving high power/energy density electrode materials for advanced energy storage devices.
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spelling pubmed-61953392018-10-20 Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance Ling, Tao Da, Pengfei Zheng, Xueli Ge, Binghui Hu, Zhenpeng Wu, Mengying Du, Xi-Wen Hu, Wen-Bin Jaroniec, Mietek Qiao, Shi-Zhang Sci Adv Research Articles Atomic-level structure engineering can substantially change the chemical and physical properties of materials. However, the effects of structure engineering on the capacitive properties of electrode materials at the atomic scale are poorly understood. Fast transport of ions and electrons to all active sites of electrode materials remains a grand challenge. Here, we report the radical modification of the pseudocapacitive properties of an oxide material, Zn(x)Co(1−x)O, via atomic-level structure engineering, which changes its dominant charge storage mechanism from surface redox reactions to ion intercalation into bulk material. Fast ion and electron transports are simultaneously achieved in this mixed oxide, increasing its capacity almost to the theoretical limit. The resultant Zn(x)Co(1−x)O exhibits high-rate performance with capacitance up to 450 F g(−1) at a scan rate of 1 V s(−1), competing with the state-of-the-art transition metal carbides. A symmetric device assembled with Zn(x)Co(1−x)O achieves an energy density of 67.3 watt-hour kg(−1) at a power density of 1.67 kW kg(−1), which is the highest value ever reported for symmetric pseudocapacitors. Our finding suggests that the rational design of electrode materials at the atomic scale opens a new opportunity for achieving high power/energy density electrode materials for advanced energy storage devices. American Association for the Advancement of Science 2018-10-19 /pmc/articles/PMC6195339/ /pubmed/30345366 http://dx.doi.org/10.1126/sciadv.aau6261 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Ling, Tao
Da, Pengfei
Zheng, Xueli
Ge, Binghui
Hu, Zhenpeng
Wu, Mengying
Du, Xi-Wen
Hu, Wen-Bin
Jaroniec, Mietek
Qiao, Shi-Zhang
Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title_full Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title_fullStr Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title_full_unstemmed Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title_short Atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
title_sort atomic-level structure engineering of metal oxides for high-rate oxygen intercalation pseudocapacitance
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6195339/
https://www.ncbi.nlm.nih.gov/pubmed/30345366
http://dx.doi.org/10.1126/sciadv.aau6261
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