Effect of Al(2)O(3) Buffer Layers on the Properties of Sputtered VO(2) Thin Films

VO(2) thin films were grown on silicon substrates using Al(2)O(3) thin films as the buffer layers. Compared with direct deposition on silicon, VO(2) thin films deposited on Al(2)O(3) buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO(2) thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al(2)O(3)/VO(2)/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO(2) thin films can be induced by an electrical field. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1007/s40820-017-0132-x) contains supplementary material, which is available to authorized users.